The Advanced Compact MOSFET Model and its Application to Inversion Coefficient Based Circuit Design

Contemporary MOSFET mathematical models contain many parameters, most of which have little or no meaning to circuit designers. Designers therefore, continue to use obsolete models -such as the MOSFET square law -for circuit design calculations. However, low-voltage, lowpower systems development demands more advanced circuit design techniques. In this paper I present a brief literature review of MOSFET modeling, which has culminated in the development of the Advanced Compact MOSFET model. Next, I discuss the key ideas and equations of the ACM model, a physically based model with few parameters and equations. Additionally, I show that the ACM model can aid designers in small and large signal circuit analysis in three major respects. First, the ACM model is continuous throughout all regions of operation. Second, terms in ACM model equations appear explicitly in equations that specify circuit performance. Third, the ACM model can aid designers in neglecting MOSFET small signal components that have little influence on circuit performance. Lastly, I conclude with a brief discussion of transconductor linearity, and conclude by mentioning some promising areas of research. The Advanced Compact MOSFET Model and its Application to Inversion Coefficient Based Circuit Design Sean T. Nicolson Copyright © 2002 3